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Product Category: MOSFET RoHS: No Technology: Si Mounting Style: Through Hole Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Id - Continuous Drain Current: 20 A Rds On - Drain-Source Resistance: 270 mOhms Vgs - Gate-Source Voltage: 20 V Maximum Operating Temperature: + 150 C Fall Time: 58 ns Minimum Operating Temperature: - 55 C Pd - Power Dissipation: 280 W Rise Time: 59 ns Factory Pack Quantity: 500 Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 110 ns Typical Turn-On Delay Time: 18 ns